Our Patents
Learn about Ann Semic’s wide-ranging portfolio of patents for our inventions in Epitaxy, Chips, LED Package, Modules and UVC Sterilizer technology.
Ann Semic’s Patents
Ann Semic focuses on technological innovation and intellectual property protection all the time, and now our team has 95 national patents, including 91 invention patents, 3 utility models, and 1 design since 2000. The patents cover the fields of substrate, extenstion, chip, package, and application. All our patents are true and effective on China and Global Patent Examination Information Inquiry (CNIPA). Also you can get more informations at: http://cpquery.cnipa.gov.cn/
Ann Semin’s Patent List
Patent No
Patent Name
Patent Type
Files
201811424969.6
Manufacturing method and application of light-emitting diode external extension structure
Innovation
201811424969.6
Manufacturing method and application of light-emitting diode external extension structure
Innovation
201811415026.7
Method for cleaning reaction chamber of metal organic chemical vapor deposition equipment
Innovation
201810312186.2
High-voltage LED chip preparation method for increasing the proportion of light-emitting surface
Innovation
201710756746.9
A method for improving the luminous efficiency of high-voltage LED chips
Innovation
201710705340.8
Optimizing the epitaxial structure of the ultraviolet LED light-emitting layer and its growth method
Innovation
201710704820.2
Epitaxial structure for improving luminous efficiency of purple LED and its growth method
Innovation
201710354841.6
Equipment for supplying copper polishing liquid in the process of LED chip thinning
Innovation
201710137877.9
A GaN-based HEMT device epitaxial structure and its growth process
Innovation
201610418150.3
High-brightness cyan LED epitaxial structure and production process
Innovation
201610373575.7
Method for growing multiple quantum wells in active region of ultraviolet LED
Innovation
201510229939.X
Method for removing residual gold from lithographic marking points of LED chips
Innovation
201510056425.9
An epitaxy method for improving current expansion of GaN-based LED chips
Innovation
201510035749.4
A GaN-based LED epitaxial structure suitable for high current density and its growth method
Innovation
201410834914.8
An evaporation machine for reducing Au consumption in LED electrodes
Innovation
201410091144.2
Growth method of composite nucleation layer for improving quality of gallium nitride crystal
Innovation
201410091099.0
Method for manufacturing LED chip with roughened surface of GaN-based epitaxial layer
Innovation
201410090745.1
Method for growing GaN-based LED multi-stage buffer layer with sapphire substrate as substrate
Innovation
201410090582.7
An epitaxial method for improving the luminous brightness of GaN-based LED
Innovation
201410090546.0
An epitaxial growth method for improving reverse leakage of gallium nitride-based light-emitting diodes
Innovation
201410090321.5
An epitaxial growth method for improving electrostatic tolerance of GaN-based LED
Innovation
201410002107.X
An epitaxial growth method for avoiding large-size epitaxial lobes
Innovation
201410001948.9
High-brightness gallium nitride-based light-emitting diode epitaxial growth method
Innovation
201410001887.6
Channel layer technology growth method for improving luminous efficiency of gallium nitride-based light-emitting diode
Innovation
201410001858.X
Method for growing light-emitting diode with novel P-type electron blocking layer structure
Innovation
201310224408.2
Epitaxial structure and growth method for improving wavelength concentration in GaN-based epitaxial wafer
Innovation
201310180372.2
Growth method of GaN-based light-emitting diode epitaxial structure
Innovation
201310099202.1
LED epitaxial wafer with N-type insertion layer with trapezoidal structure and its growth method
Innovation
201310008579.1
A growth method of multiple quantum well layers for improving LED brightness
Innovation
201210424140.2
Epitaxial structure for improving luminous efficiency and preparation method thereof
Innovation
201210367628.6
Method for cutting light-emitting originals with different cutting hole depths
Innovation
201210341597.7
Method for cutting semiconductor element containing dielectric layer
Innovation
201210281517.3
Method for removing wax used in semiconductor wafer thinning process
Innovation
201210249443.5
Method for cutting metal-containing back-plated semiconductor original
Innovation
201210243438.3
LED chip with stepped current blocking structure and manufacturing method thereof
Innovation
200910051657.X
Multi-quantum well structure for optoelectronic device and manufacturing method thereof
Innovation
200910021736.6
Conductive silver glue for packaging LED and preparation method thereof
Innovation
Let's Work Together!
Whether it is ordering a UVC sample to take your design to the next step or planning to start a new UVC project this is where to get connected with what you need.
Headquarter
Building 14, Zone B, Digital Economy Industrial Park, No.136 Yuhai East Road, Hangzhou Bay New District, Ningbo, Zhejiang Province
(+86) 0574-58010899
project@annsemic.com
Branch
No. 425 Block A, Huafeng Internet + Creative Park, Gonghe Industrial Road, Xixiang Street, Bao’an District, Shenzhen, Guangdong Provice
(+86) 136 3165 9615
sales@annsemic.com
